rflw 5n www.vishay.com vishay electro-films revision: 17-sep-13 1 document number: 61087 for technical questions, contact: efi@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high frequency wire bondable rf spiral inductor, 0.050" x 0.050" rflw series of thin film spiral inductors on quartz are designed for rf circuits th at require wire bondable components. high precision eq uivalent circuit modeling enables accurate computer simulation of component performance. measured s parame ter files are also available upon request. in many rf application, correct component selection is achieved through experimentatio n. to help designers during the design process, a sample kit of standard values is available. additional values and form factors available upon request. features ? high frequency ? wire bond assembly ? small size: 0.050" x 0.050" x 0.020" ? low dcr, high q ? low parasitic capacitance, high srf ? equivalent circuit model enclosed ? s parameter files av ailable for download ? sample kit available ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? rf choking for dc biasing ? rf tuning circuits ? lumped element filters ? ? ? ? notes (1) custom values available upon request. see custom design section below. (2) main source of value tolerance is due to variation in wire bonds. see test fixture section below. (3) maximum rated power of 125 mw at 70 c, li nearly de-rated to zero at 125 c. note (4) including the added inductance and resi stance of typical bond wires at 250 mhz. see equivalent ci rcuit section below. standard electrical specifications parameter value unit inductance range (1) 0.018 to 0.150 h tolerance (2) 20 % max. power handling (3) 125 mw operating temperature - 55 to + 125 c storage temperature - 55 to + 125 c stability, 1000 h, + 125 c, 125 mw 2.0 % max. ? r / r % esd: aec-q200-002, component classifica tion 5b (up to 16 kv) 5.0 % max. ? r / r % rf characteristics - typical values part number inductance (nh) dcr ( ? ) in-circuit inductance (4) (nh) q (unitless) srf (ghz) 250 mhz 1000 mhz 250 mhz 1000 mhz rflw5n1800b 18 19 1.0 19 16 13 6 rflw5n5200b 47 49 3.3 48 16 9 3.8 52 56 3.6 53 17 9 3.5 rflw5n8000b 80 87 4.5 82 18 7 2.4 rflw5n1000a 100 125 5.4 102 17 5 1.9 rflw5n1200a 120 156 7.7 122 18 4 1.7 rflw5n1500a 150 220 9.3 152 18 3 1.5
rflw 5n www.vishay.com vishay electro-films revision: 17-sep-13 2 document number: 61087 for technical questions, contact: efi@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 equivalent circuit the inductors spiral trace presents a substantial amount of se ries resistance, and the close spacing of spiral turns present measurable amounts of stray capacitance that interact with the inductive characteristics. for accurate modeling of the rflw compone nt in-circuit performance, measured s parameter files are available upon request. another useful tool commonly used to model the behavior of el ectronic components at high frequency is the equivalent circuit model. while the equivalent circui t model accurately predicts the reactive part of the total impedance, it fails to determine t he real part of the response at high frequenc y. this is due to the fact that the model does not include skin and proximity effects that significantly increase the real part of the impedance as the frequency rises. dimensions in inches (millimeters) length width thickness bond pad diameter 0.050 (1.2) 0.003 0.050 (1.2) 0.003 0.020 (0.5) 0.001 6 (0.15) mechanical specifications chip substrate material quartz conductor material gold conductor thickness 5 m 20 % bond pad diameter 0.006" global part number information global part number: rflw5n1200amnt0 global part number description: rflw 50 x 50 no pass 120 nh 20 % t0 model size passivation inductance (nh) inductance multiplier code tolerance code special packaging code rflw 3 = 30 x 30 5 = 50 x 50 s = silicon nitride n = none first 4 digits are significant figures of capacitance c = 0.001 b = 0.01 a = 0.1 m = 20 % l = 25 % n = none waffle ws = 100 min., 1 mult tape and reel t0 = 100 min., 100 mult t1 = 1000 min., 100 mult ts = 100 min., 1 mult 0.050 0.006 0.002 ? 0.006 0.002 0.006 0.022 0.022 0.050 5n120 l f r w 0a mn t0
rflw 5n www.vishay.com vishay electro-films revision: 17-sep-13 3 document number: 61087 for technical questions, contact: efi@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 equivalent ci rcuit model the equivalent circuit values are presented in the table below: note (1) typical bond wires are approximated as being 1.25 mil in diameter gold, totaling a length of 3 mil. the resistance listed above includes the added effect of the bond wire adhesi on to the circuit board and component. test fixture the results presented in the datasheet we re obtained by assembling the components onto a thin film test fixture using non-conducting epoxy and 1.25 mil diameter gold bond wires. ? measurements were conducted using an hp 8753e network analyzer with cascade micro-tech air coplanar probes. ? the parasitic elements of the bond wires are a major contributor to the tolerance of the lower value components. we consider the following bond-wire geometry to be ty pical for the assembly of the rflw pars: text fixture diagram equivalent circuit model - typical values inductance (nh) l dcr ( ? ) r shunt capacitance (ff) c r bw (1) ( ? ) l bw (nh) 18 1.0 38 1.4 0.1 47 2.8 37 1.4 0.1 52 3.0 39 1.4 0.1 80 3.9 52 1.4 0.1 100 4.7 65 1.4 0.1 120 6.3 68 1.4 0.1 150 7.7 67 1.4 0.1 bond wire s piral inductor r bw l bw r l c l: de s ire inductance r: para s itic s elf re s i s tance c: para s itic s hunt capacitance r bw : bond wire s elf re s i s tance l bw : para s itic bond wire inductance 10 mil alumina te s t board, 25 mil thick rflw center pad on inductor s ide pad on inductor au bond wire pad s , 20 mil 2 20 mil 20 mil
rflw 5n www.vishay.com vishay electro-films revision: 17-sep-13 4 document number: 61087 for technical questions, contact: efi@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical component performance inductance vs. frequency quality factor vs. frequency layout considerations the rf spiral inductor is electrically connected to the circ uit by wire bonds. all wire bo nds add parasitic inductance and resistance, as shown in the schematic drawing above. ? it is important to note that setup variations might affect th e performance of the component. sp ecial care must be given to minimize these effects by careful design of the component host circuit board. the following aspects should be considered: ? bond wire length should be mi nimized. the bond wire added inductance can be roughly esti mated at 0.75 nh per mil of 1.25 mil diameter gold wire. ? any ground plane directly under the component will increase th e parasitic shunt capacitance. this will cause self resonance at lower frequencies. ? the epoxy used to attach the component is the limiting factor in power handling. applications that require high power handling are recommended to use high temperature epoxy and to insure adequate heat sinking. custom designed spiral inductors vishay efi will custom design and measure addi tional values and form factors upon request. ? typical inductance density is limited to: ? 110 nh/mm 2 ? it is important to note, that both series resistance and sr f characteristics will degrade as inductance values approach the inductance density limit presented above. inductance (nh) 10 100 1000 10 000 fre q uency (mhz) 350 300 250 200 150 100 50 0 18 nh 47 nh 80 nh 52 nh 100 nh 120 nh 150 nh q (unitless) 10 100 1000 10 000 fre q uency (mhz) 22 17 12 7 2 - 3 18 nh 47 nh 80 nh 52 nh 100 nh 120 nh 150 nh
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